Shenzhen Tongxinke Electronic Technology Co., Ltd.
หมายเลขรุ่น: B10G3741N55D B10G3741N55DZ
แบรนด์: แอมเพิล
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| Parameter | Specification |
|---|---|
| Frequency Range | 3700 MHz ~ 4100 MHz (Precisely covers 5G NR n77 high-frequency core band, suitable for 3.7-4.1GHz 5G deployment) |
| Output Power at 3dB Compression | 47.4dBm (55W CW, at 50V supply, 3900MHz, pulsed CW measurement) |
| Typical Power Gain | 33.5 dB (at 50V supply, 47dBm output, 3900MHz, CW signal) |
| Typical Drain Efficiency | 37.0% (at PL=7.9W/39dBm, 1-carrier W-CDMA signal, PAR=7.2dB, 3900MHz) |
| Saturated Drain Efficiency | 42% (at PL=PL(3dB), 3900MHz) |
| Supply Voltage | 48V/50V nominal, Maximum Rated Drain-Source Breakdown Voltage 100V |
| Quiescent Current | 120 mA (carrier path), independent biasing for peaking path (VGSq(peak)=VGSq(carrier)-0.5V) |
| Package Type | PQFN-7x7-20, 7×7mm leadless thermal enhanced package with exposed thermal pad, 20 terminals |
| Port Characteristics | Internally matched to 50Ω input, 30Ω output pre-matched, simplifying RF PCB design and reducing external components |
| Architecture | 3-stage fully integrated asymmetrical Doherty with built-in input splitter, output combiner, carrier/peaking amplifier paths and driver stages |
| Operating Temperature | -40°C ~ +125°C (Maximum Junction Temperature 175°C) |
| Thermal Resistance | Junction-to-case thermal resistance as low as 3.2 K/W (typical value, at PL=55W) |
| Load Mismatch Tolerance | Capable of withstanding VSWR=10:1 through all phases (at 50V supply, 3700MHz, CW signal), improving system robustness |
| Gain Flatness | Only 2.8dB within 3700-4100MHz band, suitable for ultra-broadband communication systems |
| ESD Protection | CDM Class C3 (1000V), HBM Class 2 (2000V), enhancing device reliability |
| Stability | Rollett stability factor K>1 (at -40°C, 0.15GHz to 5GHz frequency range), ensuring stable operation across the entire band |
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